Point defect interactions with extended defects in semiconductors
نویسندگان
چکیده
منابع مشابه
Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects
We demonstrate that strained GeSi/Si heterostructures act as a model system for the study of the interaction of propagating dislocations with point, line and planar defects. In such heterostructures, the effective stress acting on a propagating dislocation may be varied from tens of MPa to of order 1 GPa, and the length of the propagating dislocation segment may be varied from nm to hundreds of...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1999
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.60.4711